bby 58-04w ... bby 58-06w semiconductor group jan-13-1999 1 silicon tunig diodes preliminary data excellent linearity high q hyperabrupt tuning diode low series inductance designed for low tuning voltage operation for vco's in mobile communications equipment for low frequency control elements such as tcxos and vcxos very low capacitance spread 1 3 vso05561 2 bby 58-05w bby 58-06w bby 58-04w type marking ordering code pin configuration package bby 58-04w bby 58-05w bby 58-06w b4 b5 b6 q62702- q62702- q62702- 1 = a1 1 = a1 1 = c1 2 = c2 2 = a2 2 = c2 sot-323 3 = c1/a2 3 = c1/2 3 = a1/2 maximum ratings parameter symbol value unit diode reverse voltage v r 10 v forward current i f 20 ma operating temperature range t op -55...+150 c storage temperature t stg -55...+150
bby 58-04w ... bby 58-06w semiconductor group jan-13-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 8 v i r - - 1 na reverse current v r = 8 v, t a = 65 c i r - - 100 ac characteristics 19.3 - - 6.6 diode capacitance v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4 v, f = 1 mhz c t pf 17.5 - - 5.5 18.3 12.35 8.6 6 - c t1 / c t3 - capacitance ratio v r = 1 v, v r = 3 v, f = 1 mhz - 2.15 3.3 3.05 2.8 c t1 / c t4 capacitance ratio v r = 1 v, v r = 4 v, f = 1 mhz - w r s 0.25 - series resistance v r = 1 v, f = 1 ghz - case capacitance f = 1 mhz pf c c 0.09 - series inductance nh - l s - 0.6
bby 58-04w ... bby 58-06w semiconductor group jan-13-1999 3 diode capacitance c t = f ( v r ) f = 1mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v r 0 4 8 12 16 20 24 pf 32 c t temperature coefficient of the diode capacitance t cc = f ( v r ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v r -4 10 -3 10 1/c t cc normalized diode capacitance c (ta) / c (25c) = f ( t a ) f = 1mhz, v r = parameter -30 -10 10 30 50 70 c 100 t a 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 - 1.05 c ta / c 25c 1v 4v
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